What is bandgap of inp?

The bandgap of InP (indium phosphide) is approximately 1.35 electron volts (eV) at room temperature. This means that InP is a direct bandgap semiconductor as the energy required to excite an electron from the valence band to the conduction band is relatively low. This property makes InP a useful material for making optoelectronic devices such as light-emitting diodes (LEDs) and photovoltaic cells. InP has a wide range of applications in the field of telecommunications, high-speed electronics, and solar cells. It is one of the most widely used semiconductor materials for applications in which high-speed operation, high power efficiency, and low power consumption are desired.